stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 description STP4435 is the p - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices a re particularly suited for low voltage ap plication such as lcd backlight, notebook computer power management, and other battery powered circuits . pin configuration sop - 8 part marking sop - 8 y year code a preduce code b process code feature l - 30v/ - 9 . 2 a, r ds(on) = - 22 m (typ.) @v gs = - 10v l - 30v/ - 7.0 a, r ds(on) = 3 0 m @v gs = - 4.5 v l super high density cell design for e xtremely low r ds(on) l exceptional on - resistance and maximum dc current capability l sop - 8 package design
stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage v dss - 30 v gate - source voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d - 10.0 - 7.0 a pulsed drain current i dm - 5 0 a continuous source current (diode conduction) i s - 2.3 a power dissipation t a =25 t a =70 p d 2.8 1.8 w operation junction temperature t j - 55/150 stor gae temperature range t stg - 55/150 thermal resistance - junction to ambient r ja 70 /w
stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol c ondition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,i d = - 250ua - 30 v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250 ua - 1.0 - 3.0 v gate leakage current i gss v ds =0v,v gs = 20 v 100 na zero gate voltage drain current i dss t j =55 v ds = - 30v,v gs =0v - 1 ua v ds = - 30v,v gs =0v - 5 drain - source on - resistance r ds(on) v gs = - 10v, i d = - 9 .2a v gs = - 4.5 v, i d = - 7.0 0. 0 22 0. 0 3 0 0.028 0.035 forward tran conductance g fs v ds = - 10v,i d = - 9 .0a 24 s diode forward voltage v sd i s = - 2.0a,v gs =0v - 0.8 - 1.0 v dynamic total gate charge q g v ds = - 15v,v gs = - 10v i d - 9. a 16 24 nc gate - source charge q gs 2.3 gate - drain charge q gd 4.5 input capacitance ciss v ds = - 15 v,vgs= 0 v f=1mhz 1650 pf output cap acitance coss 350 reverse transfer c apacitance crss 235 turn - on time t d(on) tr v dd =15v,r l =15 i d = - 1.0a,v gen = - 10v r g =6 16 30 ns 1 7 30 turn - off time t d(off) tf 65 110 35 8 0
stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 typical characterictics ( 25 unless note )
stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 typical characterictics ( 25 unless note )
stp4 435 p channel enhancement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ?2007, stanson corp. STP4435 2007. v1 sop - 8 package outline
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